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 RB521S30_1 ? NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 8 of 12 NXP Semiconductors RB521S30 200 mA low VF MEGA Schottky barrier recti?er The current ratings for the typical waveforms as shown in Figure 8, 9 and 10 are calculated according to the equations: with IIFAV()= IM ×δ M de?ned as peak current, FAV() at DC, and with I IRMS = IM ×δ RMS de?ned as RMS current. 8.1 Quality information This product has been quali?ed in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test quali?cation for discrete semiconductors , and is suitable for use in automotive applications. 9. Package outline Fig 12. Duty cycle de?nition = t1 t2 P t 006aaa812 duty cycle d t1 t2 IRMS = I Fig 13. Package outline SOD523 (SC-79) 02-12-13 Dimensions in mm 1.65 1.25 1.55 1.15 0.17 0.11 0.34 0.26 0.65 0.58 0.85 0.75 1 2 |